SMS840 0.13a , 50v , r ds(on) 10 ? p-channel enhancement mosfet elektronische bauelemente 25-nov-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. top view a l c b d g h j f k e 1 2 3 1 2 3 sot - 23 rohs compliant product a suffix of -c specifies halogen & lead-free features low on-resistance : 10 low input capacitance: 30pf low out put capacitance : 10pf low threshold : 2v fast switching speed : 2.5ns applications dc-dc converter cellular & pcmcia card cordless telephone power management in portable and battery etc marking pd package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v dss -50 v continuous gate-source voltage v gss 20 v continuous drain current @t a =25c i d -130 ma pulsed drain current(tp 10us) i dm -520 ma power dissipation @t a =25c p d 225 mw thermal resistance, junction to ambient r ja 556 c/w junction and storage temperature range t j , t stg -55~150 c g 1 s 2 d 3 p-channel ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
SMS840 0.13a , 50v , r ds(on) 10 ? p-channel enhancement mosfet elektronische bauelemente 25-nov-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static characteristics 1 drain-source breakdown voltage bv dss -50 - - v v gs =0, i d = -250 a zero gate voltage drain current i dss - - -0.1 a v gs =0, v ds = -25v - - -15 v gs =0, v ds = -50v gate-source leakage current i gss - - 60 a v gs =20v, v ds =0 gate-source threshold voltage v gs(th) -0.8 - -2 v v ds =v gs , i d = -1ma static drain-source on resistance r ds(on) - 5 10 v gs = -5v, i d = -0.1a forward transconductance g fs 50 - - ms v ds = -25v, , i d = -0.1a, f=1.0khz dynamic characteristics input capacitance c iss - 30 - pf v ds = -5v, v gs =0, f=1mhz output capacitance c oss - 10 - reverse transfer capacitance c rss - 5 - switching characteristics 2 turn-on delay time t d(on) - 25 - ns v dd = -15v, ,i d = -2.5a, r l =50 , turn-off delay time t d(off) - 16 - rise time t r - 1 - fall time t f - 8 - gate charge q t - 6000 - pc source-drain diode characteristics continuous current i s - - 0.13 a pulsed current i sm - - 0.52 forward voltage 2 v sd - -2.5 - v notes: 1. pulse test : pw 300us, duty cycle 2%. 2. switching time is essentially independent of o perating temperature.
SMS840 0.13a , 50v , r ds(on) 10 ? p-channel enhancement mosfet elektronische bauelemente 25-nov-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
SMS840 0.13a , 50v , r ds(on) 10 ? p-channel enhancement mosfet elektronische bauelemente 25-nov-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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